\n ## Chart: Open-loop pulsed programming of the CMO-HfOx ReRAM array ### Overview The image presents a 4x5 grid of charts, each depicting the conductance (in µS) of a ReRAM device as a function of pulse number. Each chart shows three curves representing different pulse parameters: Gmin (blue), Gmax (red), and Gsp (green). The title indicates the data relates to open-loop pulsed programming of a CMO-HfOx ReRAM array. ### Components/Axes * **Title:** Open-loop pulsed programming of the CMO-HfOx ReRAM array (top-center) * **X-axis Label:** Pulse Number (appears on all charts, ranging from 0 to 2100) * **Y-axis Label:** Conductance [µS] (appears on all charts, ranging from 0 to 10) * **Legend:** Located in the top-left corner of each chart, with the following labels and corresponding colors: * Gmin (Blue, dashed line) * Gmax (Red, dashed line) * Gsp (Green, dashed line) * **Grid:** Each chart has a grid with vertical lines at intervals of 400 along the x-axis. * **Chart Arrangement:** 4 rows and 5 columns. ### Detailed Analysis or Content Details Each of the 20 individual charts displays similar trends, but with varying magnitudes and slight differences in curve behavior. Here's a breakdown of the general trends observed, followed by approximate data points extracted from a representative chart (the one in the top-left corner). **General Trends:** * **Gmin (Blue):** Generally remains relatively stable at a low conductance value throughout the pulse sequence. There is a slight initial increase, followed by stabilization. * **Gmax (Red):** Starts at a higher conductance than Gmin and exhibits a more pronounced initial decrease, followed by a period of fluctuation and eventual stabilization at a lower conductance level. * **Gsp (Green):** Shows a more dynamic behavior, with initial fluctuations and a tendency to settle between the conductance levels of Gmin and Gmax. **Data Points (Top-Left Chart - Approximate):** * **Gmin (Blue):** * Pulse 0: ~0.6 µS * Pulse 400: ~0.8 µS * Pulse 800: ~0.8 µS * Pulse 1200: ~0.8 µS * Pulse 1600: ~0.8 µS * Pulse 2000: ~0.8 µS * **Gmax (Red):** * Pulse 0: ~3.2 µS * Pulse 400: ~2.0 µS * Pulse 800: ~1.2 µS * Pulse 1200: ~1.0 µS * Pulse 1600: ~1.0 µS * Pulse 2000: ~1.0 µS * **Gsp (Green):** * Pulse 0: ~1.6 µS * Pulse 400: ~1.2 µS * Pulse 800: ~1.0 µS * Pulse 1200: ~0.8 µS * Pulse 1600: ~0.8 µS * Pulse 2000: ~0.8 µS **Variations Across Charts:** The initial conductance values for all three curves (Gmin, Gmax, Gsp) vary slightly across the 20 charts. Some charts show a more pronounced decrease in Gmax, while others exhibit more stable curves. The settling point of Gsp also varies, sometimes closer to Gmin and sometimes closer to Gmax. ### Key Observations * The Gmin curve consistently represents the lowest conductance state. * The Gmax curve consistently represents the highest initial conductance state, but decreases significantly with pulse application. * The Gsp curve appears to mediate between Gmin and Gmax, potentially representing a switching behavior. * There is a clear trend of conductance change with pulse number, indicating the ReRAM devices are being programmed. * The variations between the charts suggest device-to-device variability in the ReRAM array. ### Interpretation The data demonstrates the open-loop pulsed programming behavior of a CMO-HfOx ReRAM array. The three curves (Gmin, Gmax, Gsp) likely represent different programming conditions or measurement points during the pulse sequence. Gmax represents the initial high resistance state, which is driven to a lower resistance state with each pulse. Gmin represents the low resistance state. Gsp is likely a measurement of the conductance during the pulse, or a specific point after the pulse. The consistent decrease in Gmax suggests that the ReRAM devices are being switched from a high resistance state to a low resistance state. The variations between the charts indicate that the switching process is not uniform across the array, likely due to inherent device-to-device variability in the material properties or fabrication process. The stabilization of the curves at higher pulse numbers suggests that the devices are reaching a stable resistance state. The data suggests that the CMO-HfOx ReRAM array is capable of being programmed using pulsed voltage, but further optimization may be needed to improve the uniformity of the switching process across the array. The observed device-to-device variability could be a limiting factor for the performance and reliability of the ReRAM array.